US Patent Issued to Micron Technology on Sept. 2 for "Memory devices having one-time-programmable fuses and/or antifuses formed from thin-film transistors" (Italian, American Inventors)

ALEXANDRIA, Va., Sept. 3 -- United States Patent no. 12,408,332, issued on Sept. 2, was assigned to Micron Technology Inc. (Boise, Idaho).

"Memory devices having one-time-programmable fuses and/or antifuses formed from thin-film transistors" was invented by Paolo Fantini (Vimercate, Italy), Lorenzo Fratin (Milan) and Fabio Pellizzer (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "Memory devices, and associated systems and methods, are disclosed herein. A representative memory device comprises a substrate, an insulative layer over the substrate, and a memory array over the insulative layer. The memory device further comprises a fuse array positioned in the insulative layer and configured as a non...