US Patent Issued to Micron Technology on Sept. 16 for "Memory circuitry and method used in forming memory circuitry" (Idaho Inventors)

ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,419,048, issued on Sept. 16, was assigned to Micron Technology Inc. (Boise, Idaho).

"Memory circuitry and method used in forming memory circuitry" was invented by Collin Howder (Boise, Idaho) and Taehyun Kim (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method used in forming a memory array comprising strings of memory cells comprises forming a stack comprising vertically-alternating different-composition first tiers and second tiers. The stack comprises lower channel-material strings extending through the first tiers and the second tiers. A sacrificial plug comprises sacrificial material directly above individual of the lower channel-...