US Patent Issued to Micron Technology on Sept. 16 for "Memory cell formation in three dimensional memory arrays using atomic layer deposition" (Italian, American Inventors)

ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,419,200, issued on Sept. 16, was assigned to Micron Technology Inc. (Boise, Idaho).

"Memory cell formation in three dimensional memory arrays using atomic layer deposition" was invented by Paolo Fantini (Vimercate, Italy), Stephen W. Russell (Boise, Idaho), Enrico Varesi (Milan) and Lorenzo Fratin (Buccinasco, Italy).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods, systems, and devices for memory cell formation in three dimensional memory arrays using atomic layer deposition (ALD) are described. The method may include depositing a stack of layers over a substrate and forming multiple piers through the stacks of layers. The method may further incl...