US Patent Issued to Micron Technology on Sept. 16 for "Dynamic allocation of a capacitive component in a memory device" (Idaho, California Inventors)

ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,417,790, issued on Sept. 16, was assigned to Micron Technology Inc. (Boise, Idaho).

"Dynamic allocation of a capacitive component in a memory device" was invented by Fuad Badrieh (Boise, Idaho), Thomas H. Kinsley (Boise, Idaho) and Baekkyu Choi (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods and devices for dynamic allocation of a capacitive component in a memory device are described. A memory device may include one or more voltage rails for distributing supply voltages to a memory die. A memory device may include a capacitive component that may be dynamically coupled to a voltage rail based on an identification of an operating...