US Patent Issued to Micron Technology on Oct. 7 for "Transistors, array of transistors, and array of memory cells individually comprising a transistor" (Idaho Inventors)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,637, issued on Oct. 7, was assigned to Micron Technology Inc. (Boise, Idaho).

"Transistors, array of transistors, and array of memory cells individually comprising a transistor" was invented by Kamal M. Karda (Boise, Idaho), Haitao Liu (Boise, Idaho) and Sameer Chhajed (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "A transistor comprises a pair of source/drain regions having a channel region there-between. A gate is adjacent the channel region with a gate insulator being between the gate and the channel region. A fixed-charge material is adjacent the source/drain regions. Insulating material is between the fixed-charge material and the ...