US Patent Issued to Micron Technology on Oct. 7 for "Self-aligned memory architecture comprising a memory array associated with pillars and polysilicon material" (Idaho Inventors)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,626, issued on Oct. 7, was assigned to Micron Technology Inc. (Boise, Idaho).

"Self-aligned memory architecture comprising a memory array associated with pillars and polysilicon material" was invented by John Hopkins (Meridian, Idaho) and Jordan D. Greenlee (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods, systems, and devices for self-aligned etching techniques for memory formation are described. A memory device may include a stack of alternating materials and a pillar extending through the stack of alternating materials, where the stack of alternating materials and the pillar may form a set of multiple memory cells. A polysilico...