US Patent Issued to Micron Technology on Oct. 7 for "Selective single-level memory cell operation" (Chinese Inventor)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,436,880, issued on Oct. 7, was assigned to Micron Technology Inc. (Boise, Idaho).

"Selective single-level memory cell operation" was invented by Donghua Zhou (Suzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes selectively configuring a first subset of non-volatile memory blocks to operate in a single-level mode, configuring the first subset of non-volatile memory blocks to collectively operate as a pseudo single-level cache, writing data associated with performance of a memory operation to the first subset of non-volatile memory blocks, and migrating the data from the first subset of non-volatile memory blocks to a second subs...