US Patent Issued to Micron Technology on Oct. 7 for "Memory arrays with vertical transistors and the formation thereof" (Idaho Inventors)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,632, issued on Oct. 7, was assigned to Micron Technology Inc. (Boise, Idaho).

"Memory arrays with vertical transistors and the formation thereof" was invented by Fatma Arzum Simsek-Ege (Boise, Idaho), Steve V. Cole (Boise, Idaho), Scott J. Derner (Boise, Idaho) and Toby D. Robbs (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "An apparatus, such as a memory array, can have a memory cell coupled to a first digit line (e.g., a local digit line) at a first level. A second digit line (e.g., hierarchical digit line) at a second level can be coupled to a main sense amplifier. A charge sharing device at a third level between the first and second...