US Patent Issued to Micron Technology on Oct. 7 for "Dislocation enhanced transistor device and method" (Idaho Inventors)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,649, issued on Oct. 7, was assigned to Micron Technology Inc. (Boise, Idaho).

"Dislocation enhanced transistor device and method" was invented by Toshihiko Miyashita (Boise, Idaho) and Jung Chao Chiou (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "Apparatus and methods are disclosed, including memory devices and systems. Example memory devices, systems and methods include transistors formed in a (100) surface of a semiconductor substrate wherein a channel is oriented in a greater than100less than direction. The transistors further include one or more strain induced dislocations adjacent to a channel."

The patent was filed on April 14, ...