US Patent Issued to Micron Technology on Oct. 28 for "Two transistor cells for vertical three-dimensional memory" (Idaho Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,457,734, issued on Oct. 28, was assigned to Micron Technology Inc. (Boise, Idaho).

"Two transistor cells for vertical three-dimensional memory" was invented by Haitao Liu (Boise, Idaho), Litao Yang (Boise, Idaho) and Kamal M. Karda (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "Systems, methods and apparatus are provided for two transistor cells for vertical three-dimensional memory. The memory has serially connected horizontally oriented transistors each having an independent first source/drain region and a shared second source/drain region separated by channel regions, and gates opposing the channel regions and separated therefrom by a g...