US Patent Issued to Micron Technology on Oct. 21 for "Methods of forming microelectronic devices including differently sized conductive contact structures" (Singaporean, American Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,451,434, issued on Oct. 21, was assigned to Micron Technology Inc. (Boise, Idaho).

"Methods of forming microelectronic devices including differently sized conductive contact structures" was invented by Lingyu Kong (Singapore), Lifang Xu (Boise, Idaho), Indra V. Chary (Boise, Idaho), Shuangqiang Luo (Boise, Idaho) and Sok Han Wong (Singapore).

According to the abstract* released by the U.S. Patent & Trademark Office: "A microelectronic device comprises a stack structure comprising insulative structures vertically interleaved with conductive structures, first support pillar structures vertically extending through the stack structure in a first staircase region including steps defined a...