US Patent Issued to Micron Technology on Oct. 21 for "Corrective reads implementing incremental reads with respect to adjacent wordlines" (American, Chinese Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,450,016, issued on Oct. 21, was assigned to Micron Technology Inc. (Boise, Idaho).

"Corrective reads implementing incremental reads with respect to adjacent wordlines" was invented by Dheeraj Srinivasan (San Jose, Calif.) and Luanming Deng (Chengdu, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A system includes a memory device including a memory array and control logic operatively coupled with the memory array. The memory array includes a target cell connected to a target wordline, a first cell connected to a first adjacent wordline adjacent to the target wordline, and a second cell connected to a second adjacent wordline adjacent to the target ...