US Patent Issued to Micron Technology on Oct. 14 for "Volatile data storage in NAND memory" (Idaho, California Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,444,453, issued on Oct. 14, was assigned to Micron Technology Inc. (Boise, Idaho).

"Volatile data storage in NAND memory" was invented by Jeffrey S. McNeil (Nampa, Idaho), Eric N. Lee (San Jose, Calif.), Tomoko Ogura Iwasaki (San Jose, Calif.), Sheyang Ning (San Jose, Calif.), Lawrence Celso Miranda (San Jose, Calif.) and Kishore Kumar Muchherla (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Memories might include an array of memory cells having a plurality of strings of series-connected memory cells and a controller configured to cause to memory to access a first string of series-connected memory cells of the plurality of strings of s...