ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,444,705, issued on Oct. 14, was assigned to Micron Technology Inc. (Boise, Idaho).
"Memory devices and related electronic systems" was invented by Fatma Arzum Simsek-Ege (Boise, Idaho) and Yuan He (Boise, Idaho).
According to the abstract* released by the U.S. Patent & Trademark Office: "A microelectronic device comprises a first microelectronic device structure comprising a stack structure comprising conductive structures vertically alternating with insulative structures, a staircase structure within the stack structure, and vertical stacks of memory cells. Each vertical stack of memory cells individually comprises a vertical stack of capacitor structures, transistor structures each...