US Patent Issued to Micron Technology on Oct. 14 for "Memory device including support structures and contact structures having different materials" (Idaho Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,444,695, issued on Oct. 14, was assigned to Micron Technology Inc. (Boise, Idaho).

"Memory device including support structures and contact structures having different materials" was invented by Shuangqiang Luo (Boise, Idaho) and John Hopkins (Meridian, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "Some embodiments include apparatuses and methods of forming the apparatuses. One of the apparatuses includes tiers located one over another, the tiers including respective memory cells and control gates for the memory cells; a first pillar extending through the tiers and separated from the control gates, the first pillar including a first dielectric lin...