US Patent Issued to Micron Technology on Nov. 4 for "Semiconductor memory device having the structure of word-lines to avoid short circuit and method of manufacturing the same" (Japanese Inventors)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,710, issued on Nov. 4, was assigned to Micron Technology Inc. (Boise, Idaho).

"Semiconductor memory device having the structure of word-lines to avoid short circuit and method of manufacturing the same" was invented by Takashi Sasaki (Higashihiroshima, Japan) and Junya Suzuki (Higashihiroshima, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An apparatus includes a substrate, a memory cell region provided over the substrate, a peripheral region provided over the substrate and adjacent to the memory cell region, and first, second, third, fourth and fifth word-lines each extending in parallel across the memory cell region and the peripheral region...