ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,462,870, issued on Nov. 4, was assigned to Micron Technology Inc. (Boise, Idaho).
"Reading a multi-level memory cell" was invented by Mattia Robustelli (Milan), Fabio Pellizzer (Boise, Idaho), Innocenzo Tortorelli (Cernusco sul Naviglio, Italy) and Agostino Pirovano (Milan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Methods, systems, and devices for reading a multi-level memory cell are described. The memory cell may be configured to store three or more logic states. The memory device may apply a first read voltage to a memory cell to determine a logic state stored by the memory cell. The memory device may determine whether a first snapback event occu...