US Patent Issued to Micron Technology on Nov. 4 for "Program scheme for edge data wordlines in a memory device" (California Inventors)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,462,875, issued on Nov. 4, was assigned to Micron Technology Inc. (Boise, Idaho).

"Program scheme for edge data wordlines in a memory device" was invented by Hong-Yan Chen (San Jose, Calif.) and Ching-Huang Lu (Fremont, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Control logic in a memory device causes a program voltage to be applied to a selected data wordline of a plurality of wordlines of a block of a memory array for a pulse duration period during a programming operation. The control logic further causes a first pass voltage to be applied to one or more unselected data wordlines of the plurality of wordlines of the block for the pulse durat...