US Patent Issued to Micron Technology on Nov. 4 for "Memory circuitry comprising strings of memory cells and method used in forming a memory array comprising strings of memory cells" (American, Japanese, Italian Inventors)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,713, issued on Nov. 4, was assigned to Micron Technology Inc. (Boise, Idaho).

"Memory circuitry comprising strings of memory cells and method used in forming a memory array comprising strings of memory cells" was invented by Lifang Xu (Boise, Idaho), Richard J. Hill (Boise, Idaho), Yoshiaki Fukuzumi (Kanagawa, Japan) and Paolo Tessariol (Arcore, Italy).

According to the abstract* released by the U.S. Patent & Trademark Office: "Memory circuitry comprising strings of memory cells comprising memory blocks individually comprises a vertical stack comprising alternating insulative tiers and conductive tiers. Channel-material strings of memory cells extend through the insulative tiers a...