US Patent Issued to Micron Technology on Nov. 4 for "Charge loss compensation during read operations in a memory device" (California Inventors)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,462,881, issued on Nov. 4, was assigned to Micron Technology Inc. (Boise, Idaho).

"Charge loss compensation during read operations in a memory device" was invented by Vivek Venkata Kalluru (San Jose, Calif.), Michele Piccardi (Cupertino, Calif.), Taehyun Kim (San Jose, Calif.) and Theodore T. Pekny (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Control logic in a memory device initiates a read operation on a memory array of the memory device and performs a calibration operation to detect a change in string resistance in the memory array. The control logic determines whether the change in string resistance is attributable to charge loss ...