US Patent Issued to Micron Technology on Nov. 25 for "Techniques for memory cell reset using dummy word lines" (American, Japanese Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,482,511, issued on Nov. 25, was assigned to Micron Technology Inc. (Boise, Idaho).

"Techniques for memory cell reset using dummy word lines" was invented by Yuan He (Boise, Idaho) and Wenlun Zhang (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods, systems, and devices for techniques for memory cell reset using dummy word lines are described. A memory device may activate, as part of a reset operation, one or more dummy word lines to couple a voltage node with a bit line to supply the bit line with a reset voltage supplied to the voltage node. The memory device may then activate one or more word lines to couple the bit line with one or more me...