US Patent Issued to Micron Technology on Nov. 25 for "Memory device having tiers of 2-transistor memory cells and charge storage structure having multiple portions" (Idaho Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,484,208, issued on Nov. 25, was assigned to Micron Technology Inc. (Boise, Idaho).

"Memory device having tiers of 2-transistor memory cells and charge storage structure having multiple portions" was invented by Kamal M. Karda (Boise, Idaho), Durai Vishak Nirmal Ramaswamy (Boise, Idaho), Karthik Sarpatwari (Boise, Idaho) and Haitao Liu (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "Some embodiments include apparatuses and methods of using the apparatuses. One of the apparatuses includes a first conductive structure, a second conductive structure, a conductive portion coupled to one of the conductive structures, and a memory cell. The memory...