US Patent Issued to Micron Technology on Nov. 25 for "Memory circuitry and method used in forming memory circuitry" (Idaho Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,482,752, issued on Nov. 25, was assigned to Micron Technology Inc. (Boise, Idaho).

"Memory circuitry and method used in forming memory circuitry" was invented by Harsh Narendrakumar Jain (Boise, Idaho), Yiping Wang (Boise, Idaho), Jordan Chess (Meridian, Idaho) and Collin Howder (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method used in forming memory circuitry comprises forming a stack comprising vertically-alternating first tiers and second tiers, with the stack extending from a memory-array region into a stair-step region. The stair-step region comprises a flight of stairs in a first vertical cross-section along a first direction. ...