US Patent Issued to Micron Technology on Nov. 25 for "Fast program recovery with reduced programing disturbance in a memory device" (American, Japanese Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,481,452, issued on Nov. 25, was assigned to Micron Technology Inc. (Boise, Idaho).

"Fast program recovery with reduced programing disturbance in a memory device" was invented by Avinash Rajagiri (Boise, Idaho), Ching-Huang Lu (Fremont, Calif.), Aman Gupta (Boise, Idaho), Shuji Tanaka (Kanagawa, Japan), Masashi Yoshida (Kanagawa, Japan), Shinji Sato (Kanagawa, Japan) and Yingda Dong (Los Altos, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device can include a memory array coupled with a control logic. The control logic initiates a program operation on the memory array, the program operation including a program phase and a program recove...