US Patent Issued to Micron Technology on Nov. 25 for "Active area salicidation for NMOS and PMOS devices" (American, Japanese Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,484,290, issued on Nov. 25, was assigned to Micron Technology Inc. (Boise, Idaho).

"Active area salicidation for NMOS and PMOS devices" was invented by Ronald Allen Weimer (Boise, Idaho), Toshihiko Miyashita (Higashihiroshima, Japan), Dan Mihai Mocuta (Boise, Idaho) and Christopher W. Petz (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "A variety of applications can include apparatus having p-channel metal-oxide-semiconductor (PMOS) transistors and n-channel metal-oxide-semiconductor (NMOS) transistors with different metal silicide contacts. The active area of the NMOS transistor can include a first metal silicide having a first metal eleme...