US Patent Issued to Micron Technology on Nov. 18 for "Methods for depositing carbon conducting films by atomic layer deposition" (Idaho Inventor)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,473,646, issued on Nov. 18, was assigned to Micron Technology Inc. (Boise, Idaho).

"Methods for depositing carbon conducting films by atomic layer deposition" was invented by Jean-Sebastien Materne Lehn (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods, systems, and devices for depositing carbon conducting films by atomic layer deposition are described. For instance, a device may react a first precursor with a base material to form a carbon compound on a material, where the first precursor is an acetylene, a diacetylene, a tri-acetylene, a polyacetylene, an alkene, or an arene and includes at least one germanium, silicon, or tin. Addi...