US Patent Issued to Micron Technology on Nov. 18 for "Memory devices with a lower effective program verify level" (American, Italian Inventors)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,475,946, issued on Nov. 18, was assigned to Micron Technology Inc. (Boise, Idaho).

"Memory devices with a lower effective program verify level" was invented by Massimo Ernesto Bertuccio (San Donato Milanese, Italy) and Sead Zildzic Jr. (Folsom, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes an array of memory cells, a plurality of access lines, and a controller. The array of memory cells includes a plurality of strings of series-connected memory cells. The controller is configured to access the array of memory cells to program a selected memory cell of the array of memory cells to a first target level. The controller is f...