US Patent Issued to Micron Technology on Nov. 18 for "Electronic devices comprising segmented high-k dielectric materials and storage node materials, related systems, and methods of forming" (Singaporean, American Inventors)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,477,730, issued on Nov. 18, was assigned to Micron Technology Inc. (Boise, Idaho).

"Electronic devices comprising segmented high-k dielectric materials and storage node materials, related systems, and methods of forming" was invented by Yifen Liu (Meridian, Idaho), Xin Lan (Singapore), Byeung Chul Kim (Boise, Idaho), Ye Xiang Hong (Singapore), Yun Huang (Singapore) and Sok Han Wong (Singapore).

According to the abstract* released by the U.S. Patent & Trademark Office: "An electronic device includes a stack structure including vertically alternating dielectric materials and conductive materials, the conductive materials including first regions and second regions, and pillars extending...