US Patent Issued to Micron Technology on Nov. 18 for "Capacitive sensing with a micro pump in a memory device" (Japanese Inventors)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,475,931, issued on Nov. 18, was assigned to Micron Technology Inc. (Boise, Idaho).

"Capacitive sensing with a micro pump in a memory device" was invented by Tomoharu Tanaka (Yokohama, Japan), Yoshihiko Kamata (Yokohama, Japan) and Yoshiaki Fukuzumi (Yokohama, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes an array of strings of memory cells, a local bitline coupled with a plurality of the strings of memory cells, and a sense transistor having a gate terminal coupled with the local bitline. The memory device further includes a series of transistors have a data read path between a source line and the sense transistor and bet...