US Patent Issued to Micron Technology on Nov. 11 for "Microelectronic devices with source region vertical extension between upper and lower channel regions, and related methods" (Idaho Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,471,283, issued on Nov. 11, was assigned to Micron Technology Inc. (Boise, Idaho).

"Microelectronic devices with source region vertical extension between upper and lower channel regions, and related methods" was invented by Albert Fayrushin (Boise, Idaho), Haitao Liu (Boise, Idaho) and Chris M. Carlson (Nampa, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "A microelectronic device includes a stack structure comprising a vertically alternating sequence of insulative structures and conductive structures arranged in tiers. At least one pillar, comprising a channel material, extends through the stack structure. A source region, below the stack structu...