US Patent Issued to Micron Technology on Nov. 11 for "Methods used in forming memory arrays having strings of memory cells" (Idaho Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,471,281, issued on Nov. 11, was assigned to Micron Technology Inc. (Boise, Idaho).

"Methods used in forming memory arrays having strings of memory cells" was invented by Jordan D. Greenlee (Boise, Idaho), Jiewei Chen (Meridian, Idaho), John D. Hopkins (Meridian, Idaho) and Everett A. McTeer (Eagle, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory array comprising strings of memory cells comprises laterally-spaced memory blocks individually comprising a first vertical stack comprising vertically-alternating insulative tiers and conductive tiers. Strings of memory cells comprise channel-material strings that extend through the insulative tier...