US Patent Issued to Micron Technology on Nov. 11 for "Methods used in forming a memory array comprising strings of memory cells and memory arrays comprising strings of memory cells" (Singaporean, American Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,469,778, issued on Nov. 11, was assigned to Micron Technology Inc. (Boise, Idaho).

"Methods used in forming a memory array comprising strings of memory cells and memory arrays comprising strings of memory cells" was invented by Jordan D. Greenlee (Boise, Idaho), Jiewei Chen (Meridian, Idaho), Sijia Yu (Singapore), Chieh Hsien Quek (Singapore), Rita J. Klein (Boise, Idaho) and Nancy M. Lomeli (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method used in forming a memory array comprising strings of memory cells comprises forming memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive ti...