US Patent Issued to Micron Technology on May 6 for "Programming techniques for polarity-based memory cells" (Italian Inventors)

ALEXANDRIA, Va., June 10 -- United States Patent no. 12,293,789, issued on May 6, was assigned to Micron Technology Inc. (Boise, Idaho).

"Programming techniques for polarity-based memory cells" was invented by Innocenzo Tortorelli (Cernusco Sul Naviglio, Italy), Mattia Boniardi (Cormano, Italy) and Mattia Robustelli (Milan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods, systems, and devices for programming techniques for polarity-based memory cells are described. A memory device may use a first type of write operation to program one or more memory cells to a first state and a second type of write operation to program one or more memory cells to a second state. Additionally or alternatively, a memory ...