US Patent Issued to Micron Technology on May 6 for "Built-in self-test burst patterns based on architecture of memory" (Italian, American Inventors)

ALEXANDRIA, Va., June 10 -- United States Patent no. 12,293,803, issued on May 6, was assigned to Micron Technology Inc. (Boise, Idaho).

"Built-in self-test burst patterns based on architecture of memory" was invented by William Yu (Boise, Idaho), Daniele Balluchi (Cernusco Sul Naviglio, Italy), Chad B. Erickson (Boise, Idaho) and Danilo Caraccio (Milan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods, systems, and devices related to built-in self-test burst patterns based on architecture of memory. A controller can be coupled to a memory device. The controller can include built-in self-test (BIST) circuitry. The BIST circuitry can include registers configured to store respective write burst patterns a...