ALEXANDRIA, Va., June 10 -- United States Patent no. 12,295,147, issued on May 6, was assigned to Micron Technology Inc. (Boise, Idaho).
"Asymmetric memory cell design" was invented by Mattia Robustelli (Milan) and Innocenzo Tortorelli (Cernusco sul Naviglio, Italy).
According to the abstract* released by the U.S. Patent & Trademark Office: "Methods, systems, and devices for asymmetric memory cell design are described. A memory device may implement a programming scheme that uses low programming pulses based on an asymmetric memory cell design. For example, the asymmetric memory cells may have electrodes with different contact areas (e.g., widths) and may accordingly be biased to a desired polarity (e.g., negative biased or positive biased...