ALEXANDRIA, Va., June 17 -- United States Patent no. 12,314,566, issued on May 27, was assigned to Micron Technology Inc. (Boise, Idaho).
"Read disturb management for memory" was invented by Francesco Basso (Portici, Italy), Francesco Falanga (Quarto, Italy), Alberto Sassara (Naples, Italy) and Massimo Iaculo (San Marco Evangelista, Italy).
According to the abstract* released by the U.S. Patent & Trademark Office: "Methods, systems, and devices for read disturb management for memory are described. In some instances, data may be read from a first page of a virtual block of a memory system. If the data includes one or more errors, the memory system may read data from a second page of the virtual block and determine whether one or more error...