ALEXANDRIA, Va., June 16 -- United States Patent no. 12,310,010, issued on May 20, was assigned to Micron Technology Inc. (Boise, Idaho).
"Transistors with raised extension regions and semiconductor fins" was invented by Haitao Liu (Boise, Idaho), Michael Violette (Boise, Idaho), Mark A. Helm (Santa Cruz, Calif.), Guangyu Huang (El Dorado Hills, Calif.) and Vladimir Mikhalev (Boise, Idaho).
According to the abstract* released by the U.S. Patent & Trademark Office: "Apparatus having a transistor connected between a voltage node and a load node, where the transistor includes a dielectric material overlying a semiconductor material including fins and having a first conductivity type, a conductor overlying the dielectric material, first and s...