ALEXANDRIA, Va., June 12 -- United States Patent no. 12,302,545, issued on May 13, was assigned to Micron Technology Inc. (Boise, Idaho).
"Thin film transistor random access memory" was invented by Richard E. Fackenthal (Carmichael, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Methods, systems, and devices for thin film transistor random access memory are described. A memory device may include memory cells each having one or more transistors formed above a substrate. For example, a memory cell may include a transistor having a channel portion formed by one or more pillars or other structures formed above a substrate, and a gate portion including a conductor formed above the substrate and configured ...