US Patent Issued to Micron Technology on May 13 for "Read recovery for redundant array of independent NAND stripes" (Indian Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,298,852, issued on May 13, was assigned to Micron Technology Inc. (Boise, Idaho).

"Read recovery for redundant array of independent NAND stripes" was invented by Prashant Parashari (Hyderabad, India) and Gaurav Singh (Hyderabad, India).

According to the abstract* released by the U.S. Patent & Trademark Office: "A sign bit of a low-density parity-check (LDPC) codeword associated with a translation unit (TU) can be generated by performing an XOR operation on a RAIN drop corresponding to the TU and a raw read of the TU. The LDPC codeword can include a hard bit and three soft bits that include the sign bit. The LDPC codeword can be decoded using the hard bit and the three soft bits. A re...