ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,305, issued on May 13, was assigned to Micron Technology Inc. (Boise, Idaho).
"Parallel access in a memory array" was invented by Efrem Bolandrina (Fiorano al Serio, Italy), Andrea Martinelli (Bergamo, Italy), Christophe Vincent Antoine Laurent (Agrate Brianza, Italy) and Ferdinando Bedeschi (Biassono, Italy).
According to the abstract* released by the U.S. Patent & Trademark Office: "Methods, systems, and devices for parallel access in a memory array are described. A set of memory cells of a memory device may be associated with an array of conductive structures, where such structures may be coupled using a set of transistors or other switching components that are activated by a ...