US Patent Issued to Micron Technology on May 13 for "Memory device including staircase structure having conductive pads" (Idaho Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,616, issued on May 13, was assigned to Micron Technology Inc. (Boise, Idaho).

"Memory device including staircase structure having conductive pads" was invented by Alyssa N. Scarbrough (Boise, Idaho), Yiping Wang (Boise, Idaho), Jordan D. Greenlee (Boise, Idaho) and John Hopkins (Meridian, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "Some embodiments include apparatuses and methods of forming the apparatuses. One of the apparatuses includes a device including tiers of materials located one over another, the tiers of materials including respective memory cells and control gates for the memory cells. The control gates include respective portion...