ALEXANDRIA, Va., June 12 -- United States Patent no. 12,302,585, issued on May 13, was assigned to Micron Technology Inc. (Boise, Idaho).
"Memory device assembly with a leaker device" was invented by Fatma Arzum Simsek-Ege (Boise, Idaho) and Ashonita A. Chavan (Boise, Idaho).
According to the abstract* released by the U.S. Patent & Trademark Office: "Implementations described herein relate to various structures, integrated assemblies, and memory devices. In some implementations, a memory device includes multiple memory cells. Each memory cell may include a bottom electrode having an open top cylinder shape that contains a support pillar, may include a top electrode, may include an insulator that separates the top electrode from the bottom...