US Patent Issued to Micron Technology on May 13 for "Coding for quad-level memory cells having a replacement gate configuration" (Colorado Inventor)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,299,315, issued on May 13, was assigned to Micron Technology Inc. (Boise, Idaho).

"Coding for quad-level memory cells having a replacement gate configuration" was invented by Curtis Egan (Brighton, Colo.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods, systems, and devices for coding for quad-level memory cells having a replacement gate configuration are described. Data may be received for storage in a memory device that includes a memory array with memory cells having a replacement gate configuration. The data may be assigned to a plurality of different types of pages within a memory cell of the memory cells using a unit-distance code. The data ...