US Patent Issued to Micron Technology on March 4 for "Fin field effect transistor sense amplifier circuitry and related apparatuses and computing systems" (Idaho Inventors)

ALEXANDRIA, Va., March 5 -- United States Patent no. 12,243,580, issued on March 4, was assigned to Micron Technology Inc. (Boise, Idaho).

"Fin field effect transistor sense amplifier circuitry and related apparatuses and computing systems" was invented by Yuan He (Boise, Idaho) and Fatma Arzum Simsek-Ege (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "Fin field effect transistor (FinFET) sense amplifier circuitry and related apparatuses and computing systems are disclosed. An apparatus includes a pull-up sense amplifier, a pull-down sense amplifier, column select gates, global input-output (GIO) lines, and GIO pre-charge circuitry. The pull-up sense amplifier includes P-type FinFETs having a fi...