ALEXANDRIA, Va., March 26 -- United States Patent no. 12,260,098, issued on March 25, was assigned to Micron Technology Inc. (Boise, Idaho).
"Memory channel disablement" was invented by Yang Lu (Boise, Idaho), Yu-Sheng Hsu (San Jose, Calif.), Kang-Yong Kim (Boise, Idaho) and Ke Wei Chan (Zhudong Township, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "An apparatus can include memory devices and a memory controller coupled to the memory devices via memory channels. The memory channels can disable a first memory channel associated with a first memory die in a respective memory chip of a memory device and perform a memory operation via a second memory channel involving a second memory die in the respecti...