US Patent Issued to Micron Technology on March 25 for "Level shifting in all levels programming of a memory device in a memory sub-system" (California Inventors)

ALEXANDRIA, Va., March 26 -- United States Patent no. 12,260,914, issued on March 25, was assigned to Micron Technology Inc. (Boise, Idaho).

"Level shifting in all levels programming of a memory device in a memory sub-system" was invented by Sheyang Ning (San Jose, Calif.) and Lawrence Celso Miranda (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Control logic in a memory device identifies a set of a plurality of memory cells configured as multi-level cell (MLC) memory to be programmed during a program operation and causes, at a first time during a program operation, a first programming pulse to be applied to a memory cell of the memory array to be programmed to a first programming level. Th...