US Patent Issued to Micron Technology on March 25 for "Integrated transistors having gate material passing through a pillar of semiconductor material, and methods of forming integrated transistors" (Italian Inventors)

ALEXANDRIA, Va., March 26 -- United States Patent no. 12,261,223, issued on March 25, was assigned to Micron Technology Inc. (Boise, Idaho).

"Integrated transistors having gate material passing through a pillar of semiconductor material, and methods of forming integrated transistors" was invented by Antonino Rigano (Cernusco sul Naviglio, Italy) and Marcello Mariani (Milan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Some embodiments include an integrated assembly having a pillar of semiconductor material. The pillar has a base region, and bifurcates into two segments which extend upwardly from the base region. The two segments are horizontally spaced from one another by an intervening region. A conductive...