US Patent Issued to Micron Technology on March 25 for "Electronic devices comprising deuterium-containing dielectric materials" (Idaho Inventors)

ALEXANDRIA, Va., March 26 -- United States Patent no. 12,261,210, issued on March 25, was assigned to Micron Technology Inc. (Boise, Idaho).

"Electronic devices comprising deuterium-containing dielectric materials" was invented by Manzar Siddik (Boise, Idaho), Terry H. Kim (Boise, Idaho) and Kyubong Jung (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming an electronic device comprising forming an initial dielectric material comprising silicon-hydrogen bonds. A deuterium source gas and an oxygen source gas are reacted to produce deuterium species, and the initial dielectric material is exposed to the deuterium species. Deuterium of the deuterium species is incorporated into the i...