US Patent Issued to Micron Technology on March 25 for "Arrays of memory cells including pairs of memory cells having respective charge storage nodes between respective access lines" (California Inventor)

ALEXANDRIA, Va., March 26 -- United States Patent no. 12,262,536, issued on March 25, was assigned to Micron Technology Inc. (Boise, Idaho).

"Arrays of memory cells including pairs of memory cells having respective charge storage nodes between respective access lines" was invented by Theodore T. Pekny (Sunnyvale, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Arrays of memory cells including an isolation region between first and second access lines, a first memory cell having a control gate in contact with the first access line and a charge storage node having a curved cross-section having a first end in contact with a first portion of the isolation region on a first side of the isolation region and a...