US Patent Issued to Micron Technology on March 18 for "Memory device with fast write mode to mitigate power loss" (California Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,254,926, issued on March 18, was assigned to Micron Technology Inc. (Boise, Idaho).

"Memory device with fast write mode to mitigate power loss" was invented by Yu-Chung Lien (San Jose, Calif.), Juane Li (Milpitas, Calif.), Sead Zildzic Jr. (Folsom, Calif.) and Zhenming Zhou (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Implementations described herein relate to a memory device with a fast write mode to mitigate power loss. In some implementations, the memory device may detect a condition associated with power supplied to the memory device. The memory device may detect one or more pending write operations to be performed to cause data...